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Zn-diffusion InAs photodiodes on a semi-insulating GaAs substrate for high-speed and low dark-current performance
J. W. Shi
, F. M. Kuo, B. R. Huang
電機工程學系
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
2
引文 斯高帕斯(Scopus)
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Keyphrases
Zn Diffusion
100%
GaAs Substrate
100%
Current Performance
100%
Low Dark Current
100%
InAs Photodiodes
100%
Semi-insulating GaAs
100%
Photodiode
50%
Room Temperature
25%
Dark Current
25%
Scattering Effect
25%
High Speed Photodiodes
25%
Surface States
25%
Modeling Results
25%
Large Surfaces
25%
Surface-to-volume Ratio
25%
Diffusion Time
25%
Semi-insulating Substrate
25%
Dark Current Density
25%
Electron Drift
25%
Drift-diffusion
25%
Microwave Components
25%
Intervalley Scattering
25%
Diffusion Profile
25%
Low Parasitic Capacitance
25%
Engineering
Gaas Substrate
100%
Photodiode
100%
Room Temperature
16%
Conductive
16%
Scattering Effect
16%
Parasitic Capacitance
16%
Surface State
16%
Volume Ratio
16%
Diffusion Time
16%
Material Science
Gallium Arsenide
100%
Surface (Surface Science)
100%
Capacitance
50%
Density
50%
Physics
Dark Current
100%
Photodiode
100%
Room Temperature
16%
Earth and Planetary Sciences
Dark Current
100%
Room Temperature
25%
Current Density
25%