X-ray scattering studies on InGaAs quantum dots

C. H. Hsu, H. Y. Lee, Y. W. Hsieh, Y. P. Stetsko, M. T. Tang, K. S. Liang, N. T. Yeh, J. I. Chyi, D. Y. Noh

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11 引文 斯高帕斯(Scopus)


We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(001) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law.

頁(從 - 到)98-102
期刊Physica B: Condensed Matter
出版狀態已出版 - 8月 2003
事件Proceedings of the 7th SXNS - Lake Tahoe, CA, United States
持續時間: 23 9月 200227 9月 2002


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