@inproceedings{5b55041eb73b4d398d796e28d22c1b3b,
title = "Wide-bandwidth InGaP-GaAs HBT voltage-controlled oscillators in K- and Ku-band",
abstract = "A series of voltage-controlled oscillator (VCO) covering 12 to 21 GHz with double-tuned configuration using commercially available 2-μm GaAs heterojunction bipolar transistor (HBT) technology is presented. Double-tuned topology improves the tuning bandwidth and linearity in voltage sensitivity. The tuning bandwidth of the VCOs ranges from 21 to 25%, with phase noise of -117 to -124 dBc/Hz at 1 MHz offset from the carrier. The overall dc power consumption of the VCO is 75 mW with a supply voltage of -3 V. To the best authors' knowledge, this work demonstrates the best FOM among all the reported VCOs at K- and Ku-band, when tuning range is taken into account.",
keywords = "GaAs, HBT, Low phase noise, VCO, Wide tuning range",
author = "Chiong, {Chau Ching} and Chang, {Hong Yeh} and Chen, {Ming Tang}",
year = "2008",
doi = "10.1109/GSMM.2008.4534594",
language = "???core.languages.en_GB???",
isbn = "9781424418855",
series = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",
booktitle = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",
note = "2008 Global Symposium on Millimeter Waves, GSMM 2008 ; Conference date: 21-04-2008 Through 24-04-2008",
}