@inproceedings{fba70c1ed49f411c87829868788195af,
title = "Weak emitter-size effect in InP/In 0.37Ga 0.63As 0.89Sb 0.11/In 0.53Ga 0.47As double heterojunction bipolar transistors",
abstract = "This study shows that the current gain of InGaAsSb base DHBTs is less sensitive to the emitter size and collector current density (JC) due to their low surface recombination. The deduced emitter periphery surface recombination current (K B,surf) of type-I InP/In 0.37Ga 0.63As 0.89Sb 0.11 HBTs is 1.57×10 -5 μA/μm at JC = 0.1 A/cm 2, which is twenty times lower than that of the conventional InP/InGaAs SHBTs. The results manifest the great potential of InGaAsSb base for aggressively scaled THz HBTs.",
author = "Chang, {Che An} and Chen, {Shu Han} and Wang, {Sheng Yu} and Chang, {Chao Min} and Chyi, {Jen Inn}",
year = "2011",
language = "???core.languages.en_GB???",
isbn = "9781457717536",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
booktitle = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011",
note = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 ; Conference date: 22-05-2011 Through 26-05-2011",
}