Wavelength dependence of carrier-type in reduced BaTiO3:Rh

J. Y. Chang; C. R. Chinjen; S. H. Duan; C. Y. Huang; C. C. Sun

doi:10.1063/1.121321

Wavelength dependence of carrier-type in reduced BaTiO₃:Rh

J. Y. Chang, C. R. Chinjen, S. H. Duan, C. Y. Huang, C. C. Sun

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

We report that in BaTiO₃:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10^-14atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10^-10atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed.

原文	???core.languages.en_GB???
頁（從 - 到）	2199-2201
頁數	3
期刊	Applied Physics Letters
卷	72
發行號	18
DOIs	https://doi.org/10.1063/1.121321
出版狀態	已出版 - 1998

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10.1063/1.121321

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abstract = "We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10-14atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10-10atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed.",

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AU - Sun, C. C.

PY - 1998

Y1 - 1998

N2 - We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10-14atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10-10atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed.

AB - We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10-14atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10-10atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed.

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M3 - 期刊論文

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EP - 2201

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Wavelength dependence of carrier-type in reduced BaTiO3:Rh

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Wavelength dependence of carrier-type in reduced BaTiO₃:Rh