@inproceedings{9ebcf8a3137a4ab9b89ed168e06a4e0c,
title = "Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2Transistor",
abstract = "A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.",
author = "Li, \{Ming Yang\} and Hsu, \{Ching Hao\} and Shen, \{Shin Wei\} and Chou, \{Ang Sheng\} and Lin, \{Yuxuan Cosmi\} and Chuu, \{Chih Piao\} and Ning Yang and Chou, \{Sui An\} and Huang, \{Lin Yun\} and Cheng, \{Chao Ching\} and Woon, \{Wei Yen\} and Szuya Liao and Wu, \{Chih I.\} and Li, \{Lain Jong\} and Iuliana Radu and Wong, \{H. S.Philip\} and Han Wang",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",
year = "2022",
doi = "10.1109/VLSITechnologyandCir46769.2022.9830376",
language = "???core.languages.en\_GB???",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "290--291",
booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",
}