Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2Transistor

Ming Yang Li; Ching Hao Hsu; Shin Wei Shen; Ang Sheng Chou; Yuxuan Cosmi Lin; Chih Piao Chuu; Ning Yang; Sui An Chou; Lin Yun Huang; Chao Ching Cheng; Wei Yen Woon; Szuya Liao; Chih I. Wu; Lain Jong Li; Iuliana Radu; H. S.Philip Wong; Han Wang

doi:10.1109/VLSITechnologyandCir46769.2022.9830376

Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂Transistor

Ming Yang Li, Ching Hao Hsu, Shin Wei Shen, Ang Sheng Chou, Yuxuan Cosmi Lin, Chih Piao Chuu, Ning Yang, Sui An Chou, Lin Yun Huang, Chao Ching Cheng, Wei Yen Woon, Szuya Liao, Chih I. Wu, Lain Jong Li, Iuliana Radu, H. S.Philip Wong, Han Wang

物理學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

15 引文斯高帕斯（Scopus）

摘要

A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.

原文	???core.languages.en_GB???
主出版物標題	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	290-291
頁數	2
ISBN（電子）	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830376
出版狀態	已出版 - 2022
事件	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States 持續時間: 12 6月 2022 → 17 6月 2022

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2022-June
ISSN（列印）	0743-1562

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區	United States
城市	Honolulu
期間	12/06/22 → 17/06/22

存取文件

10.1109/VLSITechnologyandCir46769.2022.9830376

引用此

Li, M. Y., Hsu, C. H., Shen, S. W., Chou, A. S., Lin, Y. C., Chuu, C. P., Yang, N., Chou, S. A., Huang, L. Y., Cheng, C. C., Woon, W. Y., Liao, S., Wu, C. I., Li, L. J., Radu, I., Wong, H. S. P., & Wang, H. (2022). Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂Transistor. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (頁 290-291). (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830376

Li, Ming Yang ; Hsu, Ching Hao ; Shen, Shin Wei 等. / Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂Transistor. 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. 頁 290-291 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{9ebcf8a3137a4ab9b89ed168e06a4e0c,

title = "Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2Transistor",

abstract = "A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.",

author = "Li, {Ming Yang} and Hsu, {Ching Hao} and Shen, {Shin Wei} and Chou, {Ang Sheng} and Lin, {Yuxuan Cosmi} and Chuu, {Chih Piao} and Ning Yang and Chou, {Sui An} and Huang, {Lin Yun} and Cheng, {Chao Ching} and Woon, {Wei Yen} and Szuya Liao and Wu, {Chih I.} and Li, {Lain Jong} and Iuliana Radu and Wong, {H. S.Philip} and Han Wang",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

year = "2022",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830376",

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series = "Digest of Technical Papers - Symposium on VLSI Technology",

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pages = "290--291",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",

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Li, MY, Hsu, CH, Shen, SW, Chou, AS, Lin, YC, Chuu, CP, Yang, N, Chou, SA, Huang, LY, Cheng, CC, Woon, WY, Liao, S, Wu, CI, Li, LJ, Radu, I, Wong, HSP & Wang, H 2022, Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂Transistor. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2022-June, Institute of Electrical and Electronics Engineers Inc., 頁 290-291, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 12/06/22. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830376

Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂Transistor. / Li, Ming Yang; Hsu, Ching Hao; Shen, Shin Wei 等.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 290-291 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2Transistor

AU - Li, Ming Yang

AU - Hsu, Ching Hao

AU - Shen, Shin Wei

AU - Chou, Ang Sheng

AU - Lin, Yuxuan Cosmi

AU - Chuu, Chih Piao

AU - Yang, Ning

AU - Chou, Sui An

AU - Huang, Lin Yun

AU - Cheng, Chao Ching

AU - Woon, Wei Yen

AU - Liao, Szuya

AU - Wu, Chih I.

AU - Li, Lain Jong

AU - Radu, Iuliana

AU - Wong, H. S.Philip

AU - Wang, Han

PY - 2022

Y1 - 2022

N2 - A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.

AB - A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.

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U2 - 10.1109/VLSITechnologyandCir46769.2022.9830376

DO - 10.1109/VLSITechnologyandCir46769.2022.9830376

M3 - 會議論文篇章

AN - SCOPUS:85135242590

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 290

EP - 291

BT - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

Y2 - 12 June 2022 through 17 June 2022

ER -

Li MY, Hsu CH, Shen SW, Chou AS, Lin YC, Chuu CP 等. Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂Transistor. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 290-291. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830376

Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2Transistor

摘要

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Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS₂Transistor