Wafer bonding for microsystems technologies

U. Gösele, Q. Y. Tong, A. Schumacher, G. Kräuter, M. Reiche, A. Plößl, P. Kopperschmidt, T. H. Lee, W. J. Kim

研究成果: 雜誌貢獻會議論文同行評審

77 引文 斯高帕斯(Scopus)


In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150°C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials.

頁(從 - 到)161-168
期刊Sensors and Actuators, A: Physical
出版狀態已出版 - 20 4月 1999
事件Proceedings of the 1998 E-MRS Symposium H: Materials Aspects in Microsystem Technologies - Strasbourg, FRA
持續時間: 16 6月 199819 6月 1998


深入研究「Wafer bonding for microsystems technologies」主題。共同形成了獨特的指紋。