In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150°C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials.
|頁（從 - 到）||161-168|
|期刊||Sensors and Actuators, A: Physical|
|出版狀態||已出版 - 20 4月 1999|
|事件||Proceedings of the 1998 E-MRS Symposium H: Materials Aspects in Microsystem Technologies - Strasbourg, FRA|
持續時間: 16 6月 1998 → 19 6月 1998