Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

J. Y. Fang, G. Y. Lee, J. I. Chyi, C. P. Hsu, Y. W. Kang, K. C. Fang, W. L. Kao, D. J. Yao, C. H. Hsu, Y. F. Huang, C. C. Chen, S. S. Li, J. A. Yeh, F. Ren, Y. L. Wang

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metal was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity.

原文???core.languages.en_GB???
文章編號204503
期刊Journal of Applied Physics
114
發行號20
DOIs
出版狀態已出版 - 28 11月 2013

指紋

深入研究「Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids」主題。共同形成了獨特的指紋。

引用此