Very high deposition rate of a-Si:H thin films by ECRCVD

H. F. Chiu, Y. S. Chang, J. Y. Wu, Y. S. Li, J. Y. Chang, C. C. Lee, I. C. Chen, C. C. Su, Tomi T. Li

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

For the reduction of the manufacturing cost, a high deposition rate of amorphous silicon (a-Si:H) thin film in fabrication is very important. Thus high plasma density and low process temperature deposition technique is keen to develop. Another issue of a-Si:H thin film uses plasma enhanced CVD which causes plasma damage to the film. We use electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit a-Si:H layers with varying microwave power, magnetic field, and hydrogen dilution. The major advantages of ECRCVD are high deposition rate and remote plasma zone that can avoid surface damage. A high deposition rate more than 2 nm/sec was developed by ECRCVD. Fourier transform infrared spectroscopy (FTIR) is used for measuring the microstructure factor (R*) to interpret the effects of microwave power, magnetic field, and hydrogen dilution.

原文???core.languages.en_GB???
主出版物標題China Semiconductor Technology International Conference 2011, CSTIC 2011
頁面1165-1171
頁數7
版本1
DOIs
出版狀態已出版 - 2011
事件10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
持續時間: 13 3月 201114 3月 2011

出版系列

名字ECS Transactions
號碼1
34
ISSN(列印)1938-5862
ISSN(電子)1938-6737

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???event.eventtypes.event.conference???10th China Semiconductor Technology International Conference 2011, CSTIC 2011
國家/地區China
城市Shanghai
期間13/03/1114/03/11

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