TY - JOUR
T1 - Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures
AU - Shi, Jin Wei
AU - Yen, J. L.
AU - Jiang, C. H.
AU - Chen, K. M.
AU - Hung, T. J.
AU - Yang, Ying Jay
N1 - Funding Information:
Manuscript received August 9, 2005; revised November 8, 2005. This work was sponsored by the National Science Council of Taiwan under Grants NSC 92-2218-E-008-011-, 94-2215-E-008-008-, and 94-2215-E-008-007. J.-W. Shi, C.-H. Jiang, and T.-J. Hung are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). J.-L. Yen is with the Department of Electronic Engineering, Lee-Ming Institute of Technology, Taipei County 243, Taiwan, R.O.C. K.-M. Chen and Y.-J. Yang are with the Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C., and also with the Institute of Physics, Academia Sinica, Taipei 115, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2005.863639 Fig. 1. (a) Top views and (b) cross-sectional view of device. The shaded regions indicate Zn-diffused areas. The detail geometry size of petal-shaped light-emitting aperture is labeled on (a). The inset shows the characteristics of the optical output power versus biasing current of measured device. The x and y axes, which are specified in our far-field measurement, are also defined in (a).
PY - 2006/2/1
Y1 - 2006/2/1
N2 - In this letter, we demonstrate a vertical-cavity surface-emitting laser (VCSEL) with a petal-shaped light-emitting aperture, which is realized by the Zn-diffusion technique, at a wavelength of 850 nm. The demonstrated device behaves like a two-dimensional VCSEL array and each light-emitting unit can have high coherence of in-phase lasing to form a near fundamental supermode emission. The measured far-field distributions of such a device exhibit single-lobe (spot), high-power (> 7.5 mW), and narrow divergence angle (∼6°) performance under a wide range of bias current. The ratio of in-phase lasing mode to total lasing modes, which include isolated single mode, in-phase, and out-of-phase modes, has also been analyzed by the measured far-field distributions and the theoretically calculated patterns.
AB - In this letter, we demonstrate a vertical-cavity surface-emitting laser (VCSEL) with a petal-shaped light-emitting aperture, which is realized by the Zn-diffusion technique, at a wavelength of 850 nm. The demonstrated device behaves like a two-dimensional VCSEL array and each light-emitting unit can have high coherence of in-phase lasing to form a near fundamental supermode emission. The measured far-field distributions of such a device exhibit single-lobe (spot), high-power (> 7.5 mW), and narrow divergence angle (∼6°) performance under a wide range of bias current. The ratio of in-phase lasing mode to total lasing modes, which include isolated single mode, in-phase, and out-of-phase modes, has also been analyzed by the measured far-field distributions and the theoretically calculated patterns.
KW - Semiconductor laser
KW - Vertical-cavity surface-emitting laser (VCSEL)
UR - http://www.scopus.com/inward/record.url?scp=31344461905&partnerID=8YFLogxK
U2 - 10.1109/LPT.2005.863639
DO - 10.1109/LPT.2005.863639
M3 - 期刊論文
AN - SCOPUS:31344461905
SN - 1041-1135
VL - 18
SP - 481
EP - 483
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 3
ER -