Variability-tolerant binary content addressable memory cells

Keyphrases

• Binary Content-addressable Memory 100%
• Cell Area 16%
• Memory Cell 100%
• Memory Design 16%
• Nanoscale Technology 16%
• Read Port 33%
• Read Static Noise Margin 33%
• Semiconductor Memory 16%
• Transistor 16%
• Variation Tolerance 100%
• Wordline 16%
• Write Trip Voltage 16%

Engineering

• Cell Area 50%
• Experimental Result 50%
• Nanoscale 50%
• Noise Margin 100%

Computer Science

• Content-Addressable Memory 100%
• Experimental Result 16%
• Memory Design 16%
• Noise Margin 33%
• Semiconductor Memory 16%
• Wordline 16%