Utilization of low wavelength laser linking with electrochemical etching to produce nano-scale porous layer on p-type silicon wafer with high luminous flux

Philip Nathaniel Immanuel, Chao Ching Chiang, Tien Hsi Lee, Sikkanthar Diwan Midyeen, Song Jeng Huang

研究成果: 雜誌貢獻期刊論文同行評審

摘要

The effect of using high-power He-Cd laser irradiation for electrochemical etching on p-type silicon in hydrofluoric (HF) acid solution was investigated. Laser irradiation on the silicon surface combined with electrochemical etching process successfully controlled the formation of porous silicon (PS) in nano-scale structure. On the surface of the laser-irradiated silicon surface, the formation of nano porous silicon (NPS) during electrochemical etching was controlled by the laser wavelength and power. Then, the NPS was analysed along with physicochemical properties using analytical techniques. The luminous flux of the laser power was controlled with the help of the integrating sphere system. We designated this as the bandgap energy absorption (BEA) of electrothermal reaction. The fabrication of NPS with laser-irradiation/electrochemical etching technology was feasible by controlling laser power (20 mW) up to a high luminescence flux value of 223 lm. NPS was used in the piratical application of microelectronic device.

原文???core.languages.en_GB???
文章編號016003
期刊ECS Journal of Solid State Science and Technology
10
發行號1
DOIs
出版狀態已出版 - 1月 2021

指紋

深入研究「Utilization of low wavelength laser linking with electrochemical etching to produce nano-scale porous layer on p-type silicon wafer with high luminous flux」主題。共同形成了獨特的指紋。

引用此