Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chuo, C. M. Lee
研究成果: 雜誌貢獻 › 期刊論文 › 同行評審
3
引文
斯高帕斯（Scopus）