@article{b7a7c14111af400390166abfa6fd7825,
title = "Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors",
abstract = "A marked hysteresis was observed in C-T characteristics of GaN p-i-n diodes measured during heating/cooling cycles. The phenomenon is related to positive charging of deep traps located close to the p-n junction and having the concentration higher than about 1017 cm-3. Such recharging, via some not completely clear mechanisms, also effects the current-voltage characteristics increasing the reverse and the forward currents at low forward biases.",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Zhang, {A. P.} and F. Ren and Pearton, {S. J.} and Chyi, {J. I.} and Nee, {T. E.} and Chuo, {C. C.} and Lee, {C. M.}",
note = "Funding Information: The work at IRM is partially supported by the Russian Foundation for Fundamental Research. The work at UF is partially supported by DARPA/EPRI (MDA 972-98-1-0006) monitored by ONR (J.C. Zolper), by ONR (N00014-99-1-0336, N00014-98-1-0204) and by NSF (DMR 97-32865). The work at NCU is partially supported by NS/ROC (NSC-88-2215-E-008-012).",
year = "2000",
month = sep,
day = "1",
doi = "10.1016/S0038-1101(00)00124-6",
language = "???core.languages.en_GB???",
volume = "44",
pages = "1549--1555",
journal = "Solid-State Electronics",
issn = "0038-1101",
number = "9",
}