Unstrained In0.3Ga0.7As/In0.29Al0.71As resonant tunnelling diodes grown on GaAs

H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, S. J. Yang

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

The authors investigate the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

原文???core.languages.en_GB???
頁(從 - 到)826-828
頁數3
期刊Electronics Letters
30
發行號10
DOIs
出版狀態已出版 - 12 5月 1994

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