Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

Chao Hung Wang; Kun Yu Lai; Yi Chang Li; Yen Chih Chen; Chuan Pu Liu

doi:10.1002/adma.201502314

Ultrasensitive Thin-Film-Based Al_xGa_1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

Chao Hung Wang
, Kun Yu Lai
, Yi Chang Li
, Yen Chih Chen
, Chuan Pu Liu

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

31 引文斯高帕斯（Scopus）

摘要

Al_xGa_1-xN thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Al_xGa_1-xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

原文	???core.languages.en_GB???
頁（從 - 到）	6289-6295
頁數	7
期刊	Advanced Materials
卷	27
發行號	40
DOIs	https://doi.org/10.1002/adma.201502314
出版狀態	已出版 - 1 10月 2015

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10.1002/adma.201502314

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title = "Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential",

abstract = "AlxGa1-xN thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1-xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.",

keywords = "alloying, changes of Schottky barrier height, piezotronic strain sensors, strain sensitivity",

author = "Wang, \{Chao Hung\} and Lai, \{Kun Yu\} and Li, \{Yi Chang\} and Chen, \{Yen Chih\} and Liu, \{Chuan Pu\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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T1 - Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

AU - Wang, Chao Hung

AU - Lai, Kun Yu

AU - Li, Yi Chang

AU - Chen, Yen Chih

AU - Liu, Chuan Pu

PY - 2015/10/1

Y1 - 2015/10/1

N2 - AlxGa1-xN thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1-xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

AB - AlxGa1-xN thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1-xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

KW - alloying

KW - changes of Schottky barrier height

KW - piezotronic strain sensors

KW - strain sensitivity

UR - https://www.scopus.com/pages/publications/84945454590

U2 - 10.1002/adma.201502314

DO - 10.1002/adma.201502314

M3 - 期刊論文

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SN - 0935-9648

VL - 27

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EP - 6295

JO - Advanced Materials

JF - Advanced Materials

IS - 40

ER -

Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

摘要

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引用此

Ultrasensitive Thin-Film-Based Al_xGa_1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential