@article{a29f59c4d9c74b90bc0c95fbeb8ebbd9,
title = "Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential",
abstract = "AlxGa1-xN thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1-xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.",
keywords = "alloying, changes of Schottky barrier height, piezotronic strain sensors, strain sensitivity",
author = "Wang, {Chao Hung} and Lai, {Kun Yu} and Li, {Yi Chang} and Chen, {Yen Chih} and Liu, {Chuan Pu}",
note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
year = "2015",
month = oct,
day = "1",
doi = "10.1002/adma.201502314",
language = "???core.languages.en_GB???",
volume = "27",
pages = "6289--6295",
journal = "Advanced Materials",
issn = "0935-9648",
number = "40",
}