摘要
A type of ultra-high speed photodetector was presented which used low-temperature grown GaAs as the photo-absorption layer. The device structure provided microwave mode with a velocity close to the optical velocity with a wide velocity-matched bandwidth. Better bandwidth performance was recorded due to lower microwave loss, higher microwave velocity, and better impedence matching between the electrical transmission line and the external electric load.
原文 | ???core.languages.en_GB??? |
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頁面 | 348 |
頁數 | 1 |
出版狀態 | 已出版 - 2001 |
事件 | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States 持續時間: 6 5月 2001 → 11 5月 2001 |
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???event.eventtypes.event.conference??? | Conference on Lasers and Electro-Optics (CLEO) |
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國家/地區 | United States |
城市 | Baltimore, MD |
期間 | 6/05/01 → 11/05/01 |