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摘要
We demonstrate 940-nm vertical-cavity surface-emitting lasers (VCSELs) with record-high -3 dB electrical-to-optical bandwidths of 40 and 32 GHz under room-temperature and 85 °C operations, respectively. The combination of Zn-diffusion with oxide-relief apertures inside the VCSEL cavity structure can greatly reduce the differential resistance and parasitic capacitance, which leads to an enhancement in the resistance-capacitance (RC)-limited bandwidth. Devices with different sizes of oxide-relief apertures are analyzed by use of the measured S21 and S11 two-port scattering parameters and equivalent circuit modeling techniques. For a device with a 3-μm diameter oxide-relief aperture, the extracted intrinsic bandwidth can be as high as 46.3 GHz. By using this novel device as the transmitter, we can achieve 60 Gbps error-free [bit-error-ratio (BER) <1 × 10-12] on-off keying transmission over a 1-m OM5 fiber under room temperature (RT) operation, without using any signal processing. In addition, invariant 50-Gbps transmission performance from RT to 85 °C operations, over a 100-m OM5 fiber has also been successfully demonstrated (with a BER < 1 × 10-7).
| 原文 | ???core.languages.en_GB??? |
|---|---|
| 文章編號 | 8733045 |
| 期刊 | IEEE Journal on Selected Topics in Quantum Electronics |
| 卷 | 25 |
| 發行號 | 6 |
| DOIs | |
| 出版狀態 | 已出版 - 1 11月 2019 |
指紋
深入研究「Ultrafast Zn-Diffusion and Oxide-Relief 940 nm Vertical-Cavity Surface-Emitting Lasers under High-Temperature Operation」主題。共同形成了獨特的指紋。專案
- 3 已完成
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前瞻微波光電與矽基光電整合科技應用之研究-子計畫三:用於光子-微波系統並以矽晶光電為平台的光慢波結構之高速調製器和相移器開發(3/3)
Shi, J.-W. (PI)
1/08/19 → 31/07/20
研究計畫: Research
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應用於高容量、遠距離傳輸乙太網路之高速(大於25G bit/sec)和高線性度累增崩潰檢光二極體之開發(3/3)
Shi, J.-W. (PI)
1/06/18 → 31/05/19
研究計畫: Research
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