TY - JOUR
T1 - Ultrafast Zn-Diffusion and Oxide-Relief 940 nm Vertical-Cavity Surface-Emitting Lasers under High-Temperature Operation
AU - Cheng, Chen Lung
AU - Ledentsov, Nikolay
AU - Khan, Zuhaib
AU - Yen, Jia Liang
AU - Ledentsov, Nikolay N.
AU - Shi, Jin Wei
N1 - Publisher Copyright:
© 1995-2012 IEEE.
PY - 2019/11/1
Y1 - 2019/11/1
N2 - We demonstrate 940-nm vertical-cavity surface-emitting lasers (VCSELs) with record-high -3 dB electrical-to-optical bandwidths of 40 and 32 GHz under room-temperature and 85 °C operations, respectively. The combination of Zn-diffusion with oxide-relief apertures inside the VCSEL cavity structure can greatly reduce the differential resistance and parasitic capacitance, which leads to an enhancement in the resistance-capacitance (RC)-limited bandwidth. Devices with different sizes of oxide-relief apertures are analyzed by use of the measured S21 and S11 two-port scattering parameters and equivalent circuit modeling techniques. For a device with a 3-μm diameter oxide-relief aperture, the extracted intrinsic bandwidth can be as high as 46.3 GHz. By using this novel device as the transmitter, we can achieve 60 Gbps error-free [bit-error-ratio (BER) <1 × 10-12] on-off keying transmission over a 1-m OM5 fiber under room temperature (RT) operation, without using any signal processing. In addition, invariant 50-Gbps transmission performance from RT to 85 °C operations, over a 100-m OM5 fiber has also been successfully demonstrated (with a BER < 1 × 10-7).
AB - We demonstrate 940-nm vertical-cavity surface-emitting lasers (VCSELs) with record-high -3 dB electrical-to-optical bandwidths of 40 and 32 GHz under room-temperature and 85 °C operations, respectively. The combination of Zn-diffusion with oxide-relief apertures inside the VCSEL cavity structure can greatly reduce the differential resistance and parasitic capacitance, which leads to an enhancement in the resistance-capacitance (RC)-limited bandwidth. Devices with different sizes of oxide-relief apertures are analyzed by use of the measured S21 and S11 two-port scattering parameters and equivalent circuit modeling techniques. For a device with a 3-μm diameter oxide-relief aperture, the extracted intrinsic bandwidth can be as high as 46.3 GHz. By using this novel device as the transmitter, we can achieve 60 Gbps error-free [bit-error-ratio (BER) <1 × 10-12] on-off keying transmission over a 1-m OM5 fiber under room temperature (RT) operation, without using any signal processing. In addition, invariant 50-Gbps transmission performance from RT to 85 °C operations, over a 100-m OM5 fiber has also been successfully demonstrated (with a BER < 1 × 10-7).
KW - Semiconductor lasers
KW - vertical-cavity surface emitting lasers (VCSEL)
UR - http://www.scopus.com/inward/record.url?scp=85068207117&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2019.2921385
DO - 10.1109/JSTQE.2019.2921385
M3 - 期刊論文
AN - SCOPUS:85068207117
SN - 0792-1233
VL - 25
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 6
M1 - 8733045
ER -