Ultra-shallow p⁺-junction formation in silicon by excimer laser doping - a heat and mass transfer perspective

Keyphrases

• Heat Mass Transfer 100%
• Junction Formation 100%
• Ultra-shallow 100%
• Excimer Laser Doping 100%
• Boron 75%
• Laser Fluence 50%
• On-glass 50%
• Spinon 50%
• Diffusivity 25%
• Possible Mechanisms 25%
• Dopant 25%
• Secondary Ion Mass Spectrometry 25%
• Numerical Analysis 25%
• Doping Concentration 25%
• Solid-solid Interface 25%
• Crystalline Silicon 25%
• Nanosecond Pulsed Laser 25%
• Junction Profile 25%
• Mass Diffusion 25%
• Nanometre 25%
• Thin Silicon Layer 25%
• Pulse number 25%
• Pulsed Laser Heating 25%
• High Boron 25%
• Nanosecond Time Scale 25%
• Boron Concentration 25%
• Limited Diffusion 25%
• Molten Silicon 25%

Engineering

• Excimer Laser 100%
• Laser Fluence 100%
• Junction Formation 100%
• Length Scale 50%
• Diffusivity 50%
• Dopants 50%
• Nanometre 50%
• Laser Heating 50%
• Silicon Layer 50%
• Crystalline Silicon 50%
• Nanosecond Time 50%
• Nanosecond 50%
• Dopant Concentration 50%
• Physical Picture 50%
• Boron Concentration 50%
• Melting Point 50%
• Pulsed Laser 50%