Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In _0.37Ga _0.63As _0.89Sb _0.ll base

Keyphrases

• Band Gap 50%
• Conduction Band Offset 50%
• Current Gain 50%
• DC Characteristics 50%
• Double Heterojunction Bipolar Transistor 50%
• High Current 100%
• High Current Capability 50%
• InGaAs 100%
• InGaSb 100%
• InP HBT 100%
• Low Turn-on Voltage 100%
• Microwave Characteristics 50%
• Pseudomorphic 100%
• Solid Source Molecular Beam Epitaxy 50%
• Turn-on Voltage 50%
• Ultra-low 100%
• Voltage-current 100%

Engineering

• Band Gap 50%
• Band Offset 50%
• Base Band 50%
• Bipolar Transistor 50%
• Conduction Band 50%
• Current Gain 50%
• Heterojunctions 50%
• Indium Gallium Arsenide 100%

Earth and Planetary Sciences

• Bipolar Transistor 50%
• Conduction Band 50%
• Emitter 50%
• Heterojunctions 50%
• High Current 100%
• Molecular Beam Epitaxy 50%