Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base

Shu Han Chen, Sheng Yu Wang, Hsin Yuan Chen, Kuo Hung Teng, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base reduces the conduction band offset (δEc) at the emitterlbase (EIB) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm 2. Current gain of 125 and peak IT of 238 GHz have been obtained on the devices with an emitter size of l×l0 μm 2, suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (D/C) junction.

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主出版物標題2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
出版狀態已出版 - 2008
事件2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
持續時間: 25 5月 200829 5月 2008

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

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???event.eventtypes.event.conference???2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
國家/地區France
城市Versailles
期間25/05/0829/05/08

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