Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

Z. R. Huang, S. M. Wang, C. R. Liu, Y. T. Chen, Y. T. Tsai, Z. K. Chen, C. S. Pai, Y. T. Tang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

In this study, we investigated the effect of interfacial alumina on TiN/HfZrO2(HZO)/TiN and found that this layer helps to increase the MW (3.8 V). This is due to the formation of an in plane tensile stress during annealing process. This stress increases the volume fraction of the o-phase in HZO, achieving a wake-free behavior with 2Pr=35uC/cm2 in the pristine state. In addition, insertation of AlOx reduces the leakage current by one order, maintains the polarization charge, reducing the risk of charge diffusion into HZO. Sufficient polarization charge also improves the polarization switching speed, and we obtain a gain of 75% to 700% under operating voltage less than 1.5V.

原文???core.languages.en_GB???
主出版物標題2023 Silicon Nanoelectronics Workshop, SNW 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面47-48
頁數2
ISBN(電子)9784863488083
DOIs
出版狀態已出版 - 2023
事件26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
持續時間: 11 6月 202312 6月 2023

出版系列

名字2023 Silicon Nanoelectronics Workshop, SNW 2023

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???event.eventtypes.event.conference???26th Silicon Nanoelectronics Workshop, SNW 2023
國家/地區Japan
城市Kyoto
期間11/06/2312/06/23

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