每年專案
摘要
A 1.5 μm AlN epilayer with a root-mean-square surface roughness of 0.25 nm was grown by metal-organic chemical vapor deposition at the single substrate temperature below 1200 °C. The ultra-flat surface is achieved with 30 min annealing performed in the initial growth, during which abrupt AlN hillocks are removed by pulsed H 2 etching controlled via the on/off duration of NH 3 supply. The pulsed etching technique effectively tailors the island-like morphology of the AlN buffer, facilitating the lateral crystal nucleation in subsequent growth. This study provides a simple, feasible and cost-effective manufacturing method for high-quality AlN.
原文 | ???core.languages.en_GB??? |
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文章編號 | 015509 |
期刊 | Applied Physics Express |
卷 | 12 |
發行號 | 1 |
DOIs | |
出版狀態 | 已出版 - 1 1月 2019 |
指紋
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