Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.