Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

C. S. Yang, C. C. Cheng, M. C. Kuo, P. Y. Tseng, J. L. Shen, J. Lee, W. C. Chou, S. Jeng, C. Y. Lai, T. M. Hsu, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.

原文???core.languages.en_GB???
頁(從 - 到)243-247
頁數5
期刊Thin Solid Films
429
發行號1-2
DOIs
出版狀態已出版 - 1 5月 2003

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