@article{6387fe1b823e4c7097525cb4b421bbcb,
title = "Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells",
abstract = "Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.",
keywords = "Band structure, Molecular beam epitaxy, Photon emission, Transmission electron microscopy",
author = "Yang, {C. S.} and Cheng, {C. C.} and Kuo, {M. C.} and Tseng, {P. Y.} and Shen, {J. L.} and J. Lee and Chou, {W. C.} and S. Jeng and Lai, {C. Y.} and Hsu, {T. M.} and Chyi, {J. I.}",
note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan for financially supporting this research under Contract No. NSC-91-2112-M-033-003.",
year = "2003",
month = may,
day = "1",
doi = "10.1016/S0040-6090(02)01112-4",
language = "???core.languages.en_GB???",
volume = "429",
pages = "243--247",
journal = "Thin Solid Films",
issn = "0040-6090",
number = "1-2",
}