摘要
Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.
原文 | ???core.languages.en_GB??? |
---|---|
頁(從 - 到) | 121-124 |
頁數 | 4 |
期刊 | Physica Status Solidi (B) Basic Research |
卷 | 228 |
發行號 | 1 |
DOIs | |
出版狀態 | 已出版 - 11月 2001 |