Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

Shih Wei Feng; Yung Chen Cheng; C. C. Yang; Chin Yi Tsai; Yen Sheng Lin; Chen Hsu; Kung Jeng Ma; Jen Inn Chyi

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

Shih Wei Feng
, Yung Chen Cheng
, C. C. Yang
, Chin Yi Tsai
, Yen Sheng Lin
, Chen Hsu
, Kung Jeng Ma
, Jen Inn Chyi

電機工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.

原文	???core.languages.en_GB???
頁面	II220-II221
出版狀態	已出版 - 2001
事件	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan 持續時間: 15 7月 2001 → 19 7月 2001

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???event.eventtypes.event.conference???	4th Pacific Rim Conference on Lasers and Electro-Optics
國家/地區	Japan
城市	Chiba
期間	15/07/01 → 19/07/01

引用此

@conference{77b4272aea2d4bcba09ffbca0c9ac1ed,

title = "Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures",

abstract = "Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.",

author = "Feng, \{Shih Wei\} and Cheng, \{Yung Chen\} and Yang, \{C. C.\} and Tsai, \{Chin Yi\} and Lin, \{Yen Sheng\} and Chen Hsu and Ma, \{Kung Jeng\} and Chyi, \{Jen Inn\}",

year = "2001",

language = "???core.languages.en\_GB???",

pages = "II220--II221",

note = "4th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 15-07-2001 Through 19-07-2001",

}

TY - CONF

T1 - Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

AU - Feng, Shih Wei

AU - Cheng, Yung Chen

AU - Yang, C. C.

AU - Tsai, Chin Yi

AU - Lin, Yen Sheng

AU - Hsu, Chen

AU - Ma, Kung Jeng

AU - Chyi, Jen Inn

PY - 2001

Y1 - 2001

N2 - Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.

AB - Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.

UR - https://www.scopus.com/pages/publications/0035684818

M3 - 會議論文

AN - SCOPUS:0035684818

SP - II220-II221

T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 15 July 2001 through 19 July 2001

ER -

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

摘要

???event.eventtypes.event.conference???

指紋

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