摘要
Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.
原文 | ???core.languages.en_GB??? |
---|---|
頁面 | II220-II221 |
出版狀態 | 已出版 - 2001 |
事件 | 4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan 持續時間: 15 7月 2001 → 19 7月 2001 |
???event.eventtypes.event.conference???
???event.eventtypes.event.conference??? | 4th Pacific Rim Conference on Lasers and Electro-Optics |
---|---|
國家/地區 | Japan |
城市 | Chiba |
期間 | 15/07/01 → 19/07/01 |