Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

Shih Wei Feng, Yung Chen Cheng, C. C. Yang, Chin Yi Tsai, Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Jen Inn Chyi

研究成果: 會議貢獻類型會議論文同行評審

摘要

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.

原文???core.languages.en_GB???
頁面II220-II221
出版狀態已出版 - 2001
事件4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
持續時間: 15 7月 200119 7月 2001

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???event.eventtypes.event.conference???4th Pacific Rim Conference on Lasers and Electro-Optics
國家/地區Japan
城市Chiba
期間15/07/0119/07/01

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