TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices

Fu Kuo Hsueh, Hsiao Yun Chiu, Chang Hong Shen, Jia Min Shieh, Ying Tsan Tang, Chih Chao Yang, Hsiu Chih Chen, Wen Hsien Huang, Bo Yuan Chen, Kun Ming Chen, Guo Wei Huang, Wei Hao Chen, Kuo Hsiang Hsu, Srivatsa Rangachar Srinivasa, Nicholas Jao, Albert Lee, Hochul Lee, Vijaykrishnan Narayanan, Kang Lung Wang, Meng Fan ChangWen Kuan Yeh

研究成果: 書貢獻/報告類型會議論文篇章同行評審

18 引文 斯高帕斯(Scopus)

摘要

This paper presents the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology. The 9T 3D CIM SRAM cell is able to compute NAND/AND, OR/NOR and XOR/XNOR operations within a single memory cycle. We fabricated stackable multi-fin single-grained Si FinFET using low thermal-budget CO2 far-infrared laser annealing (FIR-LA) for activation and self-aligned silicide. The proposed device achieved high Ion (320 μA/μm (n-FET) and 275 μA/μm (p-FET)) and high Ion/Ioff (>107). The proposed scheme enables the fabrication of energy and area efficient circuits for cost-aware intelligent IoT devices. For proposed 9T CIM SRAM cell, the monolithic 3D device reduces area overhead by 51%, compared to the 2D version, thanks to the stacking of three additional transistors above the 6T SRAM cell.

原文???core.languages.en_GB???
主出版物標題2017 IEEE International Electron Devices Meeting, IEDM 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面12.6.1-12.6.4
ISBN(電子)9781538635599
DOIs
出版狀態已出版 - 23 1月 2018
事件63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
持續時間: 2 12月 20176 12月 2017

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

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???event.eventtypes.event.conference???63rd IEEE International Electron Devices Meeting, IEDM 2017
國家/地區United States
城市San Francisco
期間2/12/176/12/17

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