Trap-profile extraction using high-voltage capacitance-voltage measurement in AlGaN/GaN heterostructure field-effect transistors with field plates

Wen Chia Liao, Jen Inn Chyi, Yue Ming Hsin

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced.

原文???core.languages.en_GB???
文章編號7031942
頁(從 - 到)835-839
頁數5
期刊IEEE Transactions on Electron Devices
62
發行號3
DOIs
出版狀態已出版 - 3月 2015

指紋

深入研究「Trap-profile extraction using high-voltage capacitance-voltage measurement in AlGaN/GaN heterostructure field-effect transistors with field plates」主題。共同形成了獨特的指紋。

引用此