摘要
The low-temperature transport properties of front-gated Al 0.18Ga0.82N/GaN heterostructures were investigated. The carrier density showed a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface was estimated to be 240 Å.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 3181-3184 |
頁數 | 4 |
期刊 | Journal of Applied Physics |
卷 | 94 |
發行號 | 5 |
DOIs | |
出版狀態 | 已出版 - 1 9月 2003 |