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Transparent Memory for Harsh Electronics
C. H. Ho
, J. R.Durán Retamal
,
P. K. Yang
, C. P. Lee
, M. L. Tsai
, C. F. Kang
, Jr Hau He
生醫科學與工程學系
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
14
引文 斯高帕斯(Scopus)
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指紋
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Keyphrases
Resistive Random Access Memory (ReRAM)
100%
Harsh Electronics
100%
Transparent Memory
100%
Transparent RRAM
50%
Performance Degradation
25%
MeV Protons
25%
Excellent Performance
25%
Environmental Stability
25%
Detrimental Effects
25%
Memory-based
25%
Non-volatile Memory
25%
Performance Stability
25%
Electronic Characteristics
25%
Radiation Hardness
25%
Ionizing Radiation
25%
Gas Radiation
25%
Proton Irradiation
25%
Environmental Tolerance
25%
Resistance Ratio
25%
Harsh Environmental Conditions
25%
Endurance Test
25%
Advanced Functionalities
25%
Environmental Gases
25%
Engineering
Resistive Random Access Memory
100%
Applicability
25%
Performance Degradation
25%
Fits and Tolerances
25%
Detrimental Effect
25%
Nonvolatile Memory
25%
Ionizing Radiation
25%
Resistance Ratio
25%
Material Dependent
25%
Avoid Instability
25%
Endurance Test
25%
Medicine and Dentistry
Ionizing Radiation
100%
Proton Irradiation
100%
Material Science
Resistive Random-Access Memory
100%
Aluminum Nitride
75%
Proton Irradiation
25%