摘要
This article has shown that the co-sputtering method and post-annealing treatment have successfully fabricated the transparent conductive distributed Bragg reflectors (TCDBR). The transparent conducting film, anatase Nb-doped TiO 2 (TNO), which has a high refractive index can be combined with Al-doped ZnO (AZO) low refractive index transparent conducting films to make a TCDBR capable of transferring the current from electrode to semiconductor while still maintaining the advantage for the micro resonant cavity. The eight-period stack of AZO/TNO achieves a reflectivity of up to 90% centered at 550nm and a resistivity of 1:88 × 10 -3 Ωcm.
原文 | ???core.languages.en_GB??? |
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文章編號 | 052602 |
期刊 | Japanese Journal of Applied Physics |
卷 | 51 |
發行號 | 5 PART 1 |
DOIs | |
出版狀態 | 已出版 - 5月 2012 |