Transient simulation of an a-SI TFT/LCD pixel using table-modeling techniques

This paper presents the table-modeling technique for circuit simulation. First, an a-Si TFT analytical model based on its operational physics is presented. The table-modeling technique requires current and capacitance tables for different bias voltages. These tables were obtained from an analytical model. Using pixel simulation, we found that the table-modeling technique is as accurate as the a-Si analytical model for the same given conditions. Second, the 2-D numerical model can be used as a good approximation to simulate an a-Si TFT device. The current and capacitance tables were generated from the 2-D numerical model. The simulation with an the a-Si circuit application using the table-modeling technique was very close to that using the 2-D numerical model. The impact of non-quasi static effect on the table-modeling technique is also discussed.