## 摘要

This paper presents the table-modeling technique for circuit simulation. First, an a-Si TFT analytical model based on its operational physics is presented. The table-modeling technique requires current and capacitance tables for different bias voltages. These tables were obtained from an analytical model. Using pixel simulation, we found that the table-modeling technique is as accurate as the a-Si analytical model for the same given conditions. Second, the 2-D numerical model can be used as a good approximation to simulate an a-Si TFT device. The current and capacitance tables were generated from the 2-D numerical model. The simulation with an the a-Si circuit application using the table-modeling technique was very close to that using the 2-D numerical model. The impact of non-quasi static effect on the table-modeling technique is also discussed.

原文 | ???core.languages.en_GB??? |
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頁（從 - 到） | 87-92 |

頁數 | 6 |

期刊 | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an |

卷 | 22 |

發行號 | 1 |

DOIs | |

出版狀態 | 已出版 - 1999 |