每年專案
摘要
In this work, a novel top-illuminated avalanche photodiode (APD) with a In0.52Al0.48As multiplication (M-) layer is demonstrated. The cascaded M-layer design combined with the unique p-side up mesa structure allows relaxation of the fundamental trade-off between the gain-bandwidth product and the dark current. This leads to the simultaneous high-responsivity, high-speed, high-saturation-power, and low-dark current characteristics of our APDs. At around 0.9 Vbr operation, the demonstrated device with its simple top-illuminated structure and large active window (mesa) diameter of 14 (24) μm exhibits a high responsivity (2.23 A/W), wide optical-to-electrical bandwidth (30 GHz), large gain-bandwidth product (270 GHz), low dark current (∼200 nA), and a saturation current as high as 11 mA. The excellent performance of this APD structure opens up new possibilities to further enhance the sensitivity performance of receivers for coherent communications or 106 Gbit/sec PAM-4 applications.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 7893-7900 |
頁數 | 8 |
期刊 | Journal of Lightwave Technology |
卷 | 40 |
發行號 | 24 |
DOIs | |
出版狀態 | 已出版 - 15 12月 2022 |
指紋
深入研究「Top-Illuminated Avalanche Photodiodes With Cascaded Multiplication Layers for High-Speed and Wide Dynamic Range Performance」主題。共同形成了獨特的指紋。專案
- 2 已完成
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結構波與微波光電科技之未來通訊應?-用於光子-毫米波無線通信系統的高速、寬頻、並可產生毫米波角動量模態的光電發射器之開發(子計畫二)(3/3)
Shi, J.-W. (PI)
1/08/22 → 31/07/23
研究計畫: Research
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