Top-Illuminated Avalanche Photodiodes With Cascaded Multiplication Layers for High-Speed and Wide Dynamic Range Performance

Naseem, Po Shun Wang, Zohauddin Ahmad, Syed Hasan Parvez, Sean Yang, H. S. Chen, Hsiang Szu Chang, Jack Jia Sheng Huang, Jin Wei Shi

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this work, a novel top-illuminated avalanche photodiode (APD) with a In0.52Al0.48As multiplication (M-) layer is demonstrated. The cascaded M-layer design combined with the unique p-side up mesa structure allows relaxation of the fundamental trade-off between the gain-bandwidth product and the dark current. This leads to the simultaneous high-responsivity, high-speed, high-saturation-power, and low-dark current characteristics of our APDs. At around 0.9 Vbr operation, the demonstrated device with its simple top-illuminated structure and large active window (mesa) diameter of 14 (24) μm exhibits a high responsivity (2.23 A/W), wide optical-to-electrical bandwidth (30 GHz), large gain-bandwidth product (270 GHz), low dark current (∼200 nA), and a saturation current as high as 11 mA. The excellent performance of this APD structure opens up new possibilities to further enhance the sensitivity performance of receivers for coherent communications or 106 Gbit/sec PAM-4 applications.

原文???core.languages.en_GB???
頁(從 - 到)7893-7900
頁數8
期刊Journal of Lightwave Technology
40
發行號24
DOIs
出版狀態已出版 - 15 12月 2022

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