摘要
We investigate carrier lifetimes of InAs/GaAs quantum dots (QDs) covered by a thin GaAs1-xSbxlayer by time-resolved photoluminescence (PL). Both the power dependent PL peak shift and the longer decay time confirm the type-II band alignments. Different recombination paths have been identified by temperature dependent measurements. At low temperatures, the long-range recombination with holes trapped in the GaAsSb layer is significant, resulting in non-single-exponential decays. The short-range recombination with holes confined in the band-bending region surrounding the InAs QDs is important at higher temperatures. The variation in decay time across the ground-state and the temporal PL peak redshift further confirm the localization of holes in the GaAsSb layer.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1449-1452 |
頁數 | 4 |
期刊 | Physica Status Solidi (C) Current Topics in Solid State Physics |
卷 | 6 |
發行號 | 6 |
DOIs | |
出版狀態 | 已出版 - 2009 |
事件 | 35th International Symposium on Compound Semiconductors, ISCS 2008 - Rust, Germany 持續時間: 21 9月 2008 → 24 9月 2008 |