Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer

Yu An Liao, Wei Ting Hsu, Ming Chih Lee, Pei Chin Chiu, Jen Inn Chyi, Wen Hao Chang

研究成果: 雜誌貢獻會議論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

We investigate carrier lifetimes of InAs/GaAs quantum dots (QDs) covered by a thin GaAs1-xSbxlayer by time-resolved photoluminescence (PL). Both the power dependent PL peak shift and the longer decay time confirm the type-II band alignments. Different recombination paths have been identified by temperature dependent measurements. At low temperatures, the long-range recombination with holes trapped in the GaAsSb layer is significant, resulting in non-single-exponential decays. The short-range recombination with holes confined in the band-bending region surrounding the InAs QDs is important at higher temperatures. The variation in decay time across the ground-state and the temporal PL peak redshift further confirm the localization of holes in the GaAsSb layer.

原文???core.languages.en_GB???
頁(從 - 到)1449-1452
頁數4
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
6
發行號6
DOIs
出版狀態已出版 - 2009
事件35th International Symposium on Compound Semiconductors, ISCS 2008 - Rust, Germany
持續時間: 21 9月 200824 9月 2008

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