We investigate carrier lifetimes of InAs/GaAs quantum dots (QDs) covered by a thin GaAs1-xSbxlayer by time-resolved photoluminescence (PL). Both the power dependent PL peak shift and the longer decay time confirm the type-II band alignments. Different recombination paths have been identified by temperature dependent measurements. At low temperatures, the long-range recombination with holes trapped in the GaAsSb layer is significant, resulting in non-single-exponential decays. The short-range recombination with holes confined in the band-bending region surrounding the InAs QDs is important at higher temperatures. The variation in decay time across the ground-state and the temporal PL peak redshift further confirm the localization of holes in the GaAsSb layer.
|頁（從 - 到）||1449-1452|
|期刊||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版狀態||已出版 - 2009|
|事件||35th International Symposium on Compound Semiconductors, ISCS 2008 - Rust, Germany|
持續時間: 21 9月 2008 → 24 9月 2008