@inproceedings{fbf2fcd86e634605ab3bec3717b14b24,
title = "Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development",
abstract = "Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga 0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.",
keywords = "HFETs, InGaSb, P-channel",
author = "Liau, {Geng Ying} and Lin, {Heng Kuang} and Chiu, {Pei Chin} and Ho, {Han Chieh} and Chyi, {Jen Inn} and Ko, {Chih Hsin} and Kuan, {Ta Ming} and Hsieh, {Meng Kuei} and Lee, {Wen Chin} and Wann, {Clement H.}",
year = "2010",
doi = "10.1109/ICIPRM.2010.5516381",
language = "???core.languages.en_GB???",
isbn = "9781424459209",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "348--351",
booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",
note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",
}