Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

This study investigated threshold voltage (V_TH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1 μs pulse width in the ON-state and OFF-state. OFF-state drain biases (V_DS,OFF) of 100-400 V and ON-state drain currents of I_D,ON 1-16 A were applied in the DPT to observe the post-DPT V_TH shift. The ON-state currents did not strongly influence the device’s characteristics after the DPT. However, the OFF-state voltages, particularly V_DS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the V_TH shift after the DPT at various V_DS,OFF and I_D,ON levels.