Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

Ray Ming Lin; Tzer En Nee; Mei Ching Tsai; Yuan Hao Chang; Ping Lin Fan; Rong Seng Chang

doi:10.1116/1.1474416

Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

Ray Ming Lin, Tzer En Nee, Mei Ching Tsai, Yuan Hao Chang, Ping Lin Fan, Rong Seng Chang

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

The thickness dependence of strain distribution renormalization on self-organized InAs quantum dots was systematically studied. The photoluminescence (PL) characteristics exhibit that the strain energy between quantum dots (QDs) and wetting layer (WL) is redistributed as the InAs deposition thickness changes. By the temperature dependence of emission energy shift, the dots exhibit the more InAs-like behaviors, while increasing the InAs deposition thickness.

原文	???core.languages.en_GB???
頁（從 - 到）	1125-1127
頁數	3
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	20
發行號	3
DOIs	https://doi.org/10.1116/1.1474416
出版狀態	已出版 - 5月 2002

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abstract = "The thickness dependence of strain distribution renormalization on self-organized InAs quantum dots was systematically studied. The photoluminescence (PL) characteristics exhibit that the strain energy between quantum dots (QDs) and wetting layer (WL) is redistributed as the InAs deposition thickness changes. By the temperature dependence of emission energy shift, the dots exhibit the more InAs-like behaviors, while increasing the InAs deposition thickness.",

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AU - Nee, Tzer En

AU - Tsai, Mei Ching

AU - Chang, Yuan Hao

AU - Fan, Ping Lin

AU - Chang, Rong Seng

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AB - The thickness dependence of strain distribution renormalization on self-organized InAs quantum dots was systematically studied. The photoluminescence (PL) characteristics exhibit that the strain energy between quantum dots (QDs) and wetting layer (WL) is redistributed as the InAs deposition thickness changes. By the temperature dependence of emission energy shift, the dots exhibit the more InAs-like behaviors, while increasing the InAs deposition thickness.

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Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs

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