Thermoelectric Devices by Half-Millimeter-Long Silicon Nanowires Arrays

Cheng Lun Hsin, Meng Hsin Wu, Wei Chieh Wang

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

Waste heat scavenging and IC hot spot cooling have been important topics of investigation for many decades. In this study, a novel sub-millimeter silicide/Si nanowires/Ag paste thermoelectric device is fabricated and its thermoelectric properties from 25 to 200 °C are studied. Polyimide packaging between the nanowires was used to enhance the mechanical strength of the device. The figure of merit of n-type and p-type device reached ∼0.25 and 0.21 at 200 °C, respectively, demonstrating 5 times enhancement on the ZT value compared with Si. Our experimental results prove that this method provides a cost-effective approach to fabricate thermoelectric nanodevices for future thermoelectric applications without traditional powder milling and sintering processes.

原文???core.languages.en_GB???
文章編號8826445
頁(從 - 到)921-924
頁數4
期刊IEEE Transactions on Nanotechnology
18
DOIs
出版狀態已出版 - 2019

指紋

深入研究「Thermoelectric Devices by Half-Millimeter-Long Silicon Nanowires Arrays」主題。共同形成了獨特的指紋。

引用此