Thermal stability of hydrogen-doped zinc-oxide thin-films

Chi Li Yeh; Shao Ze Tseng; Wei Ting Lin; Chien Cheng Kuo; Sheng Hui Chen

doi:10.1149/2.022201esl

Thermal stability of hydrogen-doped zinc-oxide thin-films

Chi Li Yeh, Shao Ze Tseng, Wei Ting Lin, Chien Cheng Kuo, Sheng Hui Chen

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 × 10^-3ω-cm with a 10 H₂Ar flow ratio. The increase in the H₂Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional H_o in the ZnO:H films. The resistivity of the ZnO:H film with 50 H₂Ar flow ratio can be reduced from 3.49 × 10 ^-3ω-cm to 2.35 × 10^-3ω-cm after heat treatment to 300°C.

原文	???core.languages.en_GB???
頁（從 - 到）	H14-H16
期刊	Electrochemical and Solid-State Letters
卷	15
發行號	1
DOIs	https://doi.org/10.1149/2.022201esl
出版狀態	已出版 - 2012

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10.1149/2.022201esl

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abstract = "We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 × 10-3ω-cm with a 10 H2Ar flow ratio. The increase in the H2Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional Ho in the ZnO:H films. The resistivity of the ZnO:H film with 50 H2Ar flow ratio can be reduced from 3.49 × 10 -3ω-cm to 2.35 × 10-3ω-cm after heat treatment to 300°C.",

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AU - Yeh, Chi Li

AU - Tseng, Shao Ze

AU - Lin, Wei Ting

AU - Kuo, Chien Cheng

AU - Chen, Sheng Hui

PY - 2012

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N2 - We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 × 10-3ω-cm with a 10 H2Ar flow ratio. The increase in the H2Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional Ho in the ZnO:H films. The resistivity of the ZnO:H film with 50 H2Ar flow ratio can be reduced from 3.49 × 10 -3ω-cm to 2.35 × 10-3ω-cm after heat treatment to 300°C.

AB - We investigated the thermal stability of ZnO:H films deposited by radio frequency magnetron sputtering at room temperature. The lowest resistivity obtained for a ZnO:H film was 1.99 × 10-3ω-cm with a 10 H2Ar flow ratio. The increase in the H2Ar flow ratio during deposition plays an important role in producing better thermal stability ZnO:H films as the result of the increase in the percentage of substitutional Ho in the ZnO:H films. The resistivity of the ZnO:H film with 50 H2Ar flow ratio can be reduced from 3.49 × 10 -3ω-cm to 2.35 × 10-3ω-cm after heat treatment to 300°C.

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Thermal stability of hydrogen-doped zinc-oxide thin-films

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