Thermal rectification effects of multiple semiconductor quantum dot junctions

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

On the basis of the multiple-energy-level Anderson model, we theoretically study the thermoelectric effects of semiconductor quantum dots (QDs) in the nonlinear response regime. The charge and heat currents in the sequential tunneling process are calculated by Keldysh Green's function technique. The thermal rectification effect can be observed for such a multiple QD junction system, whereas the rectification efficiency is significantly affected by the tunneling rate, size fluctuation, and location distribution of QDs. We also find that the charge current rectification with respect to temperature bias can be observed.

原文???core.languages.en_GB???
頁(從 - 到)1052021-1052025
頁數5
期刊Japanese Journal of Applied Physics
49
發行號10
DOIs
出版狀態已出版 - 10月 2010

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