@inproceedings{e846f4f450174873b2f15c5e68d8c656,
title = "Theoretical Study of High Performance Germanium Nanowire Quantum Dot",
abstract = "In this report, we demonstrate that Ge-NWQD (nanowire quantum dots) at low temperatures exhibit apparent Coulomb oscillations than that in Si-NWQD. These oscillations gradually disappear as the temperature increases, indicating the influence of phonon scattering. The increase in Coulomb oscillations enables the device to exhibit multi-level characteristics at low voltage in quantum flash, and the lower barrier high and high mobility of Ge make it advantageous for increasing the storage capacity of quantum flash devices. This research provides design guidelines for optimization of high-performance quantum flash devices.",
author = "Yang, {Han Wei} and Wu, {Yung Feng} and Hsu, {Ming Jung} and Lee, {Shao Chen} and Tang, {Ying Tsan}",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",
year = "2023",
doi = "10.23919/SNW57900.2023.10183970",
language = "???core.languages.en_GB???",
series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "71--72",
booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
}