The understanding of strain-induced device degradation in advanced MOSFETs with process-induced strain technology of 65nm node and beyond

M. H. Lin, E. R. Hsieh, Steve S. Chung, C. H. Tsai, P. W. Liu, Y. H. Lin, C. T. Tsai, G. H. Ma

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

4 引文 斯高帕斯（Scopus）

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Engineering