The suppression effect of 830 nm laser irradiation on porous silicon formation

C. C. Chiang, Y. C. Huang, P. C. Juan, F. S. Lo, T. H. Lee

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

The suppression effect of 830 nm laser irradiation on the formation porous layer p-Type silicon in hydrofluoric (HF) acidbased electrolyte has been investigated. With laser irradiation at 5.0 mW, the porous silicon layer is only few nanometers. We believe the electrochemical reaction on the laser-irradiated surface is suppressed by the laser power because of the induction of the depletion region. In the study, it is shown that the thickness of the porous silicon layer depends on the intensity of the laser power at a fixed irradiation time.

原文???core.languages.en_GB???
主出版物標題Nanoscale Electrochemistry
編輯T. Ito, A. Kusoglu
發行者Electrochemical Society Inc.
頁面1-7
頁數7
版本35
ISBN(電子)9781607685395
DOIs
出版狀態已出版 - 2015
事件Symposium on Nanoscale Electrochemistry - 228th ECS Meeting - Phoenix, United States
持續時間: 11 10月 201515 10月 2015

出版系列

名字ECS Transactions
號碼35
69
ISSN(列印)1938-6737
ISSN(電子)1938-5862

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???event.eventtypes.event.conference???Symposium on Nanoscale Electrochemistry - 228th ECS Meeting
國家/地區United States
城市Phoenix
期間11/10/1515/10/15

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