The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator

J. Oiler; X. Qiu; J. Zhu; R. Tang; S. J. Chen; H. Huang; K. Holbert; H. Barnaby; H. Yu

doi:10.1109/TRANSDUCERS.2011.5969221

The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator

J. Oiler, X. Qiu, J. Zhu, R. Tang, S. J. Chen, H. Huang, K. Holbert, H. Barnaby, H. Yu

機械工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.

原文	???core.languages.en_GB???
主出版物標題	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
頁面	2058-2061
頁數	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969221
出版狀態	已出版 - 2011
事件	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China 持續時間: 5 6月 2011 → 9 6月 2011

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名字	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
國家/地區	China
城市	Beijing
期間	5/06/11 → 9/06/11

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10.1109/TRANSDUCERS.2011.5969221

引用此

Oiler, J., Qiu, X., Zhu, J., Tang, R., Chen, S. J., Huang, H., Holbert, K., Barnaby, H., & Yu, H. (2011). The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (頁 2058-2061). 文章 5969221 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969221

@inproceedings{c926c01dd7a341c5bc502e13093ce37b,

title = "The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator",

abstract = "This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.",

keywords = "FBAR, dosimeter, ionizing radiation, resonator",

author = "J. Oiler and X. Qiu and J. Zhu and R. Tang and Chen, {S. J.} and H. Huang and K. Holbert and H. Barnaby and H. Yu",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969221",

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booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

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Oiler, J, Qiu, X, Zhu, J, Tang, R, Chen, SJ, Huang, H, Holbert, K, Barnaby, H & Yu, H 2011, The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969221, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, 頁 2058-2061, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969221

The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator. / Oiler, J.; Qiu, X.; Zhu, J. 等.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2058-2061 5969221 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

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AU - Oiler, J.

AU - Qiu, X.

AU - Zhu, J.

AU - Tang, R.

AU - Chen, S. J.

AU - Huang, H.

AU - Holbert, K.

AU - Barnaby, H.

AU - Yu, H.

PY - 2011

Y1 - 2011

N2 - This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.

AB - This paper describes the new design and material selection used to improve the sensitivity of ionizing radiation sensing with a zinc oxide based Film Bulk Acoustic-Wave Resonator (FBAR). Prior results [1] demonstrated that the parallel resonant frequency of the FBAR decreased after irradiation due to radiation-induced charge trapping in the SiN. Here, by employing Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (SiN) within a two layer SiN configuration, we were able to increase the sensitivity by over two orders of magnitude. The maximum sensitivity of 2300 kHz/krad was demonstrated and is the highest radiation sensitivity of resonant sensors known to the authors.

KW - FBAR

KW - dosimeter

KW - ionizing radiation

KW - resonator

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SN - 9781457701573

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Oiler J, Qiu X, Zhu J, Tang R, Chen SJ, Huang H 等. The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2058-2061. 5969221. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969221

The sensitivity enhancement for the radiation sensor based on Film Bulk Acoustic-Wave Resonator

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