The RTN measurement technique on leakage path finding in advanced high-k metal gate CMOS devices

E. R. Hsieh, P. Y. Lu, Steve S. Chung, J. C. Ke, C. W. Yang, C. T. Tsai, T. R. Yew

研究成果: 書貢獻/報告類型會議論文篇章同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, the evolution of BTI induced leakage paths has been evaluated by Ig-RTN technique and demonstrated on HK/MG CMOS devices. First, RTN measurement has been elaborated to identify the location of traps and their correlation to the leakage current. Then, the measured gate current transient can be used to analyze the formation of breakdown path. The results show that the evolution of leakage paths can be divided into three stages, i.e., (1) the early stage-only gate leakage and discrete RTN traps are observed, (2) the middle stage - the traps interacting with the percolation paths and exhibits a multi-level current-variation, and (3) the last stage - the formation of breakdown path. These findings provide useful information on the understanding of gate dielectric breakdown in high-k CMOS devices.

原文???core.languages.en_GB???
主出版物標題Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面154-157
頁數4
ISBN(電子)9781479999286, 9781479999286
DOIs
出版狀態已出版 - 25 8月 2015
事件22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
持續時間: 29 6月 20152 7月 2015

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2015-August

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???event.eventtypes.event.conference???22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
國家/地區Taiwan
城市Hsinchu
期間29/06/152/07/15

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