The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide- semiconductor field-effect transistors

E. R. Hsieh, Steve S. Chung

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

15 引文 斯高帕斯（Scopus）

指紋

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Keyphrases

Material Science

Engineering