The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide- semiconductor field-effect transistors

E. R. Hsieh, Steve S. Chung

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

The source/drain in an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with solid phase epitaxial (SPE) implanted Si:C before the spacer formation is proposed. Compared to the conventional nMOSFET with SPE implanted Si:C after the spacer formation, it brings in proximity to the device channel and shows great improvement of electron mobility via the stronger tensile strain effect. Experimental measurements showed that the electron mobility in the proposed process is increased by 105% over that of the control devices. At a gate length of 40 nm, an increase of more than 67% for the drain current, comparing to those of the conventional Si:C source/drain nMOSFET, has been achieved.

原文???core.languages.en_GB???
文章編號093501
期刊Applied Physics Letters
96
發行號9
DOIs
出版狀態已出版 - 2010

指紋

深入研究「The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide- semiconductor field-effect transistors」主題。共同形成了獨特的指紋。

引用此